Author Affiliations
Abstract
1 Key Laboratory of Chemical Laser, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
2 Institut des Sciences Chimiques de Rennes,équipe Verres et Céramiques, Université de Rennes, Rennes 35042, France
3 Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Pardubice 53210, Czech Republic
Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication wavelength. The prepared multilayered thin films for reflectors show good compatibility. The microcavity structure consists of Ge25Ga5Sb10S65(doped with Er3+) spacer layer surrounded by two 5-layer As40Se60/Ge25Sb5S70reflectors. Scanning/transmission electron microscopy results show good periodicity, great adherence and smooth interfaces between the alternating dielectric layers, which confirms a suitable compatibility between different materials. The results demonstrate that the chalcogenides can be used for preparing vertical Bragg reflectors and microcavity with high quality.
光电子快报(英文版)
2016, 12(3): 199